maximum ratings: (t a =25c unless otherwise noted) symbol cr250-2 CR250-3 cr250-4 units dc blocking voltage v r 2000 3000 4000 v peak repetitive reverse voltage v rrm 2000 3000 4000 v rms reverse voltage v r(rms) 1400 2100 2800 v average forward current (t a =50c) i o 200 ma peak forward surge current (t=8.3ms) i fsm 30 a operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions typ max units i r v r =rated v rrm 5.0 a i r v r =rated v rrm , t a =100c 50 a v f i r =200ma (cr250-2) 3.0 v v f i r =200ma (CR250-3) 4.0 v v f i r =200ma (cr250-4) 5.0 v c j v r =4.0v, f=1.0mhz 30 pf cr250-2 series high voltage silicon rectifer 2000 thru 4000 volts 200ma do-15 case central semiconductor corp. tm r2 (30-september 2009) description: the central semiconductor cr250-2 series types are 200ma axial lead high voltage silicon rectifiers designed for general purpose high voltage applications. marking: full part number
central semiconductor corp. tm do-15 case - mechanical outline cr250-2 series high voltage silicon rectifer 2000 thru 4000 volts 200ma r2 (30-september 2009) marking: full part number
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